- Course code
- ELL316
- L-T-P
- 3-0-0
- Credits
- 3
Basic MOS characteristics; Deep sub-micron; velocity saturation; Dynamic MOS characteristics; parasitics; leakage; sizing; propagation delay; Logical effort, path delay, optimization; Ratio-ed logic, Pass transistor logic and parasitics; Dynamic logic, pulsed sequential logic; Logical synthesis, physical design, layout; Introduction to design of VLSI memories.
